SSF2N60D ? silikron semiconductor co.,ltd. 20 13 . 08 . 27 version : 1. 0 page 1 of 8 www.silikron.com main product characteristics features and benefits description absolute m ax rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 2 a i d @ tc = 100c continuous drain current, v gs @ 10v 1.3 i dm pulsed drain current 8 p d @tc = 25c power dissipation 42 w linear derating factor 0. 34 w/c v ds drain - source voltage 600 v v gs gate - to - source voltage 30 v e as single pulse avalanche energy @ l= 53 mh 1 1 6 mj i a s avalanche current @ l= 53 mh 2. 1 a t j t stg operating junction and storage temperature range - 55 to + 150 c v dss 600 v r ds (on) 3. 8 (typ . ) i d 2 a to - 252 marking and p in assignment schematic d iagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 150 operating temperature it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 2 of 8 www.silikron.com thermal resistance symbol characteristics typ. max. units r jc junction - to - case 2.95 /w r j a junction - to - ambient ( t 10s ) 110 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 600 v v gs = 0v, id = 250a r ds(on) static drain - to - source on - resistance 3. 8 4. 5 v gs =10v , i d = 1.0 a 8.2 t j = 1 25 v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250a 2. 4 t j = 1 25 i dss drain - to - source leakage current 1 a v ds = 600 v,v gs = 0v 50 t j = 125 i gss gate - to - source forward leakage 1 00 na v gs = 30 v - 1 00 v gs = - 30 v q g total gate charge 5. 7 nc i d = 2.0 a , v ds = 48 0 v , v gs = 10v q gs gate - to - source charge 1. 7 q gd gate - to - drain("miller") charge 2 .0 t d(on) turn - on delay time 9 . 1 ns v gs =10v, vds= 300 v, r gen = 2 5 , id= 2.0 a t r rise time 6 .3 t d(off) turn - off delay time 2 3 t f fall time 1 3 c iss input capacitance 3 29 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 3 2 c rss reverse transfer capacitance 4 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 2 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 8 a v sd diode forward voltage 0 .84 1 . 4 v i s = 1 .9 a, v gs =0v t rr reverse recovery time 35 7 ns t j = 25c , i f = 2 a, di/dt = 10 0a/s q rr reverse recovery charge 1 03 0 nc
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 3 of 8 www.silikron.com test circuits and waveforms eas test circuit gate charge test circuit switch ing time test circu it switch ing waveforms n otes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics figure 2. gate to source cut - off voltage figure 1: typical output characteristics fig ure 3. drain - to - source breakdown voltage v s. case temperature figure 4: normalized on - resistance vs. case temperature
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 5 of 8 www.silikron.com fig ure 5 . maximum drain current vs. case temperature case temperature t ypical electrical and thermal characteristics fig ure 6 .typical capacitance vs. drain - to - source voltage fig ure 7 . drain - to - source voltage v s. gate - to - source voltage figure 8 . maximum effective transient thermal impedance, junction - to - case
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a 2.200 - 2.400 0.087 - 0.094 b 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 b1 0.450 - 0.550 0.018 - 0.022 c 0.450 - 0.550 0.018 - 0.022 d 6.450 - 6.750 0.254 - 0.266 d1 5.200 - 5.400 0.205 - 0.213 e 5.950 - 6.250 0.234 - 0.246 e1 2.240 - 2.340 0.088 - 0.092 e2 4.430 - 4.730 0.174 - 0.186 l1 9.450 - 9.950 0.372 - 0.392 l2 1.250 - 1.750 0.049 - 0.069 l3 0.600 - 0.900 0.024 - 0.035 k 0.000 - 0.100 0.000 - 0.004 symbol dimension in millimeters dimension in inches to - 252 package outline dimension
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 2 n60d package (available) to - 25 2 ( d - pak) operating temperature range c : - 55 to 1 50 oc devices per unit reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 1 5 0 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 2 5000 7 35000 to-252 2500 1 2500 10 25000 to-252 800 5 4000 8 32000 package type units/tape
ssf 2n60d ? silikron semiconductor co.,ltd . 20 13 . 08 . 27 version : 1. 0 page 8 of 8 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonab ly exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipm ent failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, cha racteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could g ive rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or con tained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this pub lication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconduc tor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designi ng equipment, refer to the "delivery specification" for the silikron product that you intend to use. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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